Semiconductor light emitting device and method of fabricating the same

ABSTRACT

Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.

TECHNICAL FIELD

The present disclosure relates a semiconductor light emitting device anda method of fabricating the same.

BACKGROUND ART

A III-V group nitride semiconductor has been variously used for anoptical device such as blue/green LEDs (light emitting diodes), a highspeed switching device such as a MOSFET (metal semiconductor fieldeffect transistor) and a HEMT (hetero junction field effect transistor),a light source of an illumination or a display apparatus, and the like.In particular, a light emitting device using a III group nitridesemiconductor has a direct transition-type bandgap corresponding to therange of visible rays to ultraviolet rays, and can perform highefficient light emission.

The nitride semiconductor has been mainly utilized as a LED or a LD(laser diode), and research for improving the manufacturing process orlight efficiency had been conducted.

DISCLOSURE OF INVENTION Technical Problem

Embodiments provide a semiconductor light emitting device capable ofspatially insulating each layer with a light emitting structure and amethod of fabricating the same.

Embodiments provide a semiconductor light emitting device comprising ancuter protection layer at the outer circumference between a lightemitting structure and a conductive support substrate and also removingthe cuter circumference of the light emitting structure, and a method offabricating the same.

Technical Solution

An embodiment provides a semiconductor light emitting device comprising:a light emitting structure comprising a first conductive typesemiconductor layer, an active layer under the first conductive typesemiconductor layer, and a second conductive type semiconductor layerunder the active layer; a reflective electrode layer under the lightemitting structure; and an cuter protection layer at an outercircumference of the reflective electrode layer.

An embodiment provides a semiconductor light emitting device comprising:a light emitting structure comprising a first conductive typesemiconductor layer, an active layer under the first conductive typesemiconductor layer, a second conductive type semiconductor layer underthe active layer, and an outer groove at an outer circumference of eachof the layers; and a reflective electrode layer under the light emittingstructure.

An embodiment provides a method of fabricating a semiconductor lightemitting device comprising: forming a light emitting structure on awafer substrate, the light emitting structure comprising at least astacked first conductive type semiconductor layer, active layer, andsecond conductive type semiconductor layer; forming an outer protectionlayer at an outer circumference on the second conductive typesemiconductor layer; and forming a reflective electrode layer on thesecond conductive type semiconductor layer and the outer protectionlayer.

ADVANTAGEOUS EFFECTS

According to the embodiments, in case the materiel such as thedielectric is not formed at the outer of the light emitting structure,stress caused by contacting of dielectric at the outer of the lightemitting structure can be reduced.

According to the embodiments, in case the dielectric is not formed atthe outer of the light emitting structure, fabricating process of thelight emitting device can be improved.

According to the embodiments, reliability of the light emitting devicecan be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor light emittingdevice according to an embodiment.

FIGS. 2 to 11 are views of semiconductor light emitting devicemanufacturing processes according to an embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, a semiconductor light emitting device and a method offabricating the same according to embodiments will be described indetail with reference to the accompanying drawings. In the followingdescription, when a layer (or film) is referred to as being on/underanother layer, its description will be made with reference to theaccompanying drawings. The thickness of each layer may be described asone example, and is not limited to the thicknesses of the accompanyingdrawings.

FIG. 1 is a cross-sectional view of a semiconductor light emittingdevice according to an embodiment.

Referring to FIG. 1, a semiconductor light emitting device 100 comprisesa first conductive type semiconductor layer 102, an active layer 103, asecond conductive type semiconductor layer 104, an outer protectionlayer 107, a reflective electrode layer 108, a conductive supportsubstrate 110, and a first electrode 112.

The first conductive type semiconductor layer 102 may be realized withan n-type semiconductor layer, and the n-type semiconductor layer may beformed of at least one layer by using a III-V group compoundsemiconductor. The n-type semiconductor layer may be formed of one amongGaN, InN, AN, InGaN, AlGaN, InAlGaN, and AlInN, and is doped with n-typedopants. The n-type dopants comprise a IV group element such as Si, Ge,Sn, Se, and Te.

The active layer 103 is formed under the first conductive typesemiconductor layer 102. The active layer 103 is formed with a singlequantum well structure or a multi quantum well structure. The activelayer 103 comprises a quantum well layer formed of InGaN and a quantumbarrier layer formed of GaN alternately, for example. Here, anIn_(x)Ga_(1-x)N quantum well layer is adjusted through 0≦x≦1. Ap-type/n-type cladding layer may be formed on/under the active layer103.

The second conductive type semiconductor layer 104 is formed under theactive layer 103. The second conductive type semiconductor layer 104 maybe realized with at least one of p-type semiconductor layer, and isdoped with p-type dopants. The p-type semiconductor layer may be formedof one of a compound semiconductor such as GaN, InN, AN, InGaN, AlGaN,InAlGaN, and AlInN. The p-type dopants comprise a II group element suchas Mg, Zn, Ca, Sr, and Ba.

A structure of the first conductive type semiconductor layer 102, theactive layer 103, and the second conductive type semiconductor layer 104may be defined as a light emitting structure 105.

A transparent layer (not shown) may be formed under the secondconductive type semiconductor layer 104. The transparent electrode layermay be formed of one of materials such as ITO, ZnO, IrOx, RuOx, and NiO.In the semiconductor light emitting device 100, the first conductivetype semiconductor 102 is realized with an n-type semiconductor layerand the second conductive type semiconductor layer 103 is realized witha p-type semiconductor layer, or vice versa. Also, a n-typesemiconductor layer or a p-type semiconductor layer is formed under thesecond conductive type semiconductor layer 103. Accordingly, thesemiconductor light emitting device 100 may be realized with one of ann-p junction structure, a p-n junction structure, an n-p-n junctionstructure, and a p-n-p junction structure.

Additionally, each layer of the semiconductor light emitting device 100is a compound semiconductor using a III-V group element, and may beapplied to a GaN series semiconductor, a GaAs series semiconductor, anInGaAlP series semiconductor, and an AlGaAs series semiconductor.

In addition, the reflective electrode layer 108 is formed under thesecond conductive type semiconductor layer 104, and the conductivesupport substrate 110 is formed under the reflective electrode layer108. Here, the reflective electrode layer 108 serves as a p-typeelectrode, and the p-type electrode becomes an ohmic contact in order tostably supply current to the second conductive type semiconductor layer104. Here, the reflective electrode layer 108 may be formed of a singlelayer or a multilayer having one among Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg,Zn, Pt, Au, Hf, a combination thereof. The conductive support substrate110 may be formed of copper or gold. Materials of the reflectiveelectrode layer 108 and the conductive support substrate 110 may varyand are not limited to the above materials.

The first electrode 112 is formed on the first conductive typesemiconductor layer 102. Because the conductive support substrate 110and the reflective electrode layer 108 serve as a second electrode, avertical type semiconductor light emitting device can be realized.

In addition, the outer protection layer 107 is formed on the outer ofthe reflective electrode layer 108. The outer protection layer 107 maybe formed with a frame form between the outer of the reflectiveelectrode layer 108 and the second conductive type semiconductor layer104. Here, the reflective electrode layers 108 may be formed with thesame area contacting the conductive support substrate 110 in order toobtain electrical efficiency.

The outer protection layer 107 may be formed of one among compoundsemiconductors such as GaN, InN, AN, InGaN, AlGaN, InAlGaN, and AlInN,and also may be formed of a layer that is doped with the n-type dopants,the p-type dopants, or no dopant, that is, an undoped semiconductorlayer (e.g., an undoped GaN layer). Additionally, the outer protectionlayer 107 may be formed of the same material as the second conductivetype semiconductor layer 104 and may be comprised as a structure of thesecond conductive type semiconductor layer 104.

The outer protection layer 107 may be insulated from a metal materialsuch as the conductive support substrate 110 or the reflective electrodelayer 108, such that electrical reliability of the light emittingstructure 105 can be improved. Moreover, because the outer protectionlayer 107 is formed of a III-V compound semiconductor, stress caused bycontacting the second conductive type semiconductor layer 104 can bereduced.

The outers of the first conductive type semiconductor layer 102, theactive layer 103, the second conductive type semiconductor layer 104 areetched in a frame form. That is, the light emitting structure 105comprises an outer groove 106 where a circumference area of each of thelayers 102, 103, and 104 is etched. The outer groove 106 serves as adamper by moving the outer wall of the light emitting structure 105toward the inside.

Furthermore, since an additional dielectric may be not formed on theouter groove 106, limitations due to the insulating material can beresolved and an electrical short circuit does not occur at each of thelayers 102, 103, and 104 of the light emitting structure 105 even whenit is used for many hours. That is, it may not be necessary to preventan interlayer short of the light emitting structure 105 by forming anadditional dielectric (e.g., SiO₂, epoxy, etc.) at the outer of thelight emitting structure 105.

If a dielectric (e.g., SiO₂, epoxy, etc.) is formed at the outer of thelight emitting structure 105, the dielectric may be exposed to a heatfor hours such that thermal expansion or stress occurs during aging.Therefore, shrink or crack may occur at the dielectric. Accordingly, itis impossible to normally function to protect the outer of the lightemitting structure 105.

According to this embodiment, because the outer groove 106 is formedwith an open structure without forming a dielectric at the outer of thelight emitting structure 105, more improved effect can be achieved. Thatis, the outer protection layer 107 disposed under the outer of the lightemitting structure 105 prevents the swelling of metal foreign substancesat the reflective electrode layer 108 or the conductive supportsubstrate 110, which is caused by aging or thermal expansion.Furthermore, because the outer wall of the light emitting structure 105is disposed more inward than the outer groove 106, an interlayer shortcircuit of the light emitting structure 105 due to metal foreignsubstances can be prevented.

The outer protection layer 107 may be formed with a predeterminedthickness T1 (for example 5000 to 500 um) and a width W1 (for example,20 um to 600 μm). The thickness T1 or the width W1 of the outerprotection layer 107 may vary according to a chip size, and thus is notlimited thereto.

The depth of the outer groove 106 of the light emitting structure 105 isthe depth D1 exposing the second conductive type semiconductor layer 104or the depth D2 exposing the outer protection layer 107.

Moreover, the width W2 of the outer groove 106 of the light emittingstructure 105 is formed with the minimized value (e.g., 10 μm to 500 μm)for electrical characteristics of the light emitting structure 105.Here, the width W2 satisfies W2<W1.

FIGS. 2 to 11 are views of semiconductor light emitting devicemanufacturing processes according to an embodiment.

Referring to FIGS. 2 and 3, a first conductive type semiconductor layer102 is formed on a wafer substrate 101, an active layer 103 is formed onthe first conductive type semiconductor layer 102, and a secondconductive type semiconductor layer 104 is formed on the active layer103.

Here, the nitride thin layer grows on the wafer substrate 101 by usingan E-beam evaporator, physical vapor deposition (PVD), chemical vapordeposition (CVD), plasma laser deposition (PLD), a dual-type thermalevaporator, sputtering, or metal organic chemical vapor deposition(MOCVD), but is not limited thereto. Hereinafter, one example in whichthe MOCVD is used for growing the nitride thin layer is described forconvenience of description.

The wafer substrate 101 may use at least one of sapphire (Al₂O₃), SiC,Si, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, and may be formed of asubstrate having conductive characteristics. At least one among a bufferlayer and an undoped semiconductor layer (not shown) may be formedbetween the wafer substrate 101 and the first conductive typesemiconductor layer 102.

Referring to FIG. 3, the first conductive type semiconductor layer 102may be realized with an n-type semiconductor layer, and the n-typesemiconductor layer may be formed of at least one layer by using a III-Vgroup compound semiconductor. The n-type semiconductor layer maycomprise one of GaN, InN, AN, InGaN, AlGaN, InAlGaN, and AlInN and isdoped with n-type dopants. The n-type dopants comprise a IV groupelement such as Si, Ge, Sn, Se, and Te.

The active layer 103 is formed on the first conductive typesemiconductor layer 102. The active layer 103 is formed with a singlequantum well structure or a multi quantum well structure. The activelayer 103 comprises a quantum well layer of InGaN and a quantum barrierlayer of GaN alternately. Here, the In_(x)Ga_(1-x)N well layer may beadjusted through 0≦x≦1. A p-type/n-type cladding layer may be formedabove/under the active layer 103.

A second conductive type semiconductor layer 104 is formed on the activelayer 103. The second conductive type semiconductor layer 104 may berealized with a p-type semiconductor layer of at least one layer and isdoped with p-type dopants. The p-type semiconductor layer may compriseone of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN,InAlGaN, and AlInN, and the p-type dopants comprise a II group elementsuch as Mg, Zn, Ca, Sr, and Ba.

A structure of the first conductive type semiconductor layer 102, theactive layer 103, and the second conductive type semiconductor layer 104may be defined as a light emitting structure 105. Additionally, atransparent electrode layer (not shown) may be formed of one ofmaterials such as ITO, ZnO, IrOx, RuOx, and NiO.

In the semiconductor light emitting device 105, the first conductivetype semicondcutor 102 is realized with an n-type semiconductor layerand the second conductive type semiconductor layer 103 is realized witha p-type semiconductor layer, or vice versa. Moreover, a transparentelectrode, an n-type semiconductor layer, or a p-type semiconductorlayer may be formed on the second conductive type semiconductor layer104. Accordingly, the semiconductor light emitting device 105 may berealized with one of an n-p junction structure, a p-n junctionstructure, an n-p-n junction structure, and a p-n-p junction structure.

Referring to FIGS. 3 and 4, an oxide layer pattern 109 is formed on thesurface of the center area A1 of the second conductive typesemiconductor layer 104. The oxide layer pattern may be formed of oneamong SiO₂, SiO_(x), SiN_(x), and SiO_(x)N_(y).

An outer protection layer 107 is formed on the surface of an outer areaA2 of the second conductive type semiconductor layer 104. The outerprotection layer 107 may be formed of a single layer or a multilayercomprising one of compound semiconductors such as GaN, InN, AlN, InGaN,AlGaN, InAlGaN, and AlInN. The outer protection layer 107 also may beformed of a layer that is doped with the n-type dopants, the p-typedopants, or no dopant, that is, an undoped semiconductor layer (e.g., anundoped GaN layer). Moreover, if the outer protection layer 107 is dopedwith p-type dopants, it is formed of the same material as the secondconductive type semiconductor layer 104.

If the outer protection layer 107 is an undoped GaN layer, apredetermined thickness T1 can be achieved by supplying NH₃ and TMGa orTEGa at a growth temperature of 800° C. to 1000° C.

In one chip, the width W1 of the outer protection layer 107 is 20 μm to600 μm, and its thickness T1 is 5000 to 500 μm. The width W1 and thethickness T1 of the outer protection layer 107 may vary according to achip size.

Once the cuter protection layer 107 is formed, the oxide layer pattern109 formed on the center area A1 of the second conductive typesemiconductor layer 104 is removed. That is, the oxide layer pattern 109may be removed by wet etching or dry etching.

FIG. 5 is a plan view of the wafer substrate of FIG. 4.

Referring to FIG. 5, the second conductive type semiconductor layer 104and the cuter protection layer 107 are formed on the wafer substrate101. The outer protection layer 107 is formed on an entire area exceptfor the center area A1 of the second conductive type semiconductor layer104 of each chip 100A, and an cuter area of the second conductive typesemiconductor layer 104 has a frame form at boundaries L1 and L2 of eachchip 100A.

Referring to FIG. 6, a reflective electrode layer 108 is formed on thesecond conductive type semiconductor layer 104 and the cuter protectionlayer 107. Here, the reflective electrode layer 108 serves as a p-typeelectrode, and the p-type electrode becomes an ohmic contact in order tostably supply current to the second conductive type semiconductor layer104. Here, the reflective electrode layer 108 may be formed of a singlelayer or a multilayer having one among Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg,Zn, Pt, Au, Hf, a combination thereof. A conductive support substrate110 may be formed of copper or gold. Materials of the reflectiveelectrode layer 108 and the conductive support substrate 110 may varyand are not limited to the above materials.

Referring to FIGS. 7 and 8, the wafer substrate 101 disposed under thefirst conductive type semiconductor layer 102 is removed using aphysical and/or chemical removing method. For example, the removingmethod of the wafer substrate 101 may be performed through laser liftoff (LLO). That is, when a laser of a predetermined wavelength isprojected on the wafer substrate 101, heat energy is concentrated on theboundary between the wafer substrate 101 and the first conductive typesemiconductor layer 102, such that the wafer substrate 101 is separated.

Here, when a buffer layer or/and an undoped semiconductor layer (notshown) is formed between the wafer substrate 101 and the firstconductive type semiconductor layer 102, a wet etchant is injected at aspecific layer for removal. Thus, the wafer substrate 101 can beseparated.

A polishing process may be performed through Inductively coupledPlasma/Reactive Ion Etching (ICP/RCE) on the bottom of the firstconductive type semiconductor layer 102 where the wafer substrate 101 isremoved.

Referring to FIG. 9, when the conductive support substrate 110 isdisposed under the light emitting structure 105, the first conductivetype semiconductor layer 102 is disposed on the uppermost layer.

An outer groove 106 is formed at an outer area of the light emittingstructure 105. The outer groove 106 is formed from the outer area of thefirst conductive type semiconductor layer 102 to a predetermined depthof the second conductive type semiconductor layer 104 by using mesaetching process. Here, the mesa etching process may be performed a dryor wet etching method.

The outer groove 106 is etched with the depth D1 exposing the secondconductive type semiconductor layer 104 or the depth D2 exposing theouter protection layer 107. Accordingly, the outer groove 106 is formedfrom the outer area of the first conductive type semiconductor layer 102to a predetermined depth of the second conductive type semiconductorlayer 104. Therefore, an electrical short circuit is prevented at eachinterlayer of the light emitting structure 105. The width W2 of theouter groove 106 is 10 μm to 500 μm, which is less than the width W1 ofthe outer protection layer 107. The width W2 of the outer groove 106 mayvary according to the size of a chip.

FIG. 10 is a plan view of FIG. 9.

Referring to FIG. 10, the outer groove 106 is formed in a frame form atthe outer area of each chip 100A. Because the outer groove 106 is formedwith a predetermined depth D2 at the outer area and the boundary area ofthe chip, this may be used when each chip 100A is separated.

Referring to FIG. 11, a first electrode 112 is formed on the firstconductive type semiconductor layer 102. Additionally, at least one ofthe first electrode 112 and a transparent electrode (not shown) may beformed on the first conductive type semiconductor layer 102.

In the description, it will be understood that when a layer (or film) isreferred to as being on or under another layer, it can be directly orindirectly on or under the other layer.

Any reference in this specification to one embodiment, an embodiment,example embodiment, etc., means that a particular feature, structure, orcharacteristic described in connection with the embodiment is comprisedin at least one embodiment of the invention. The appearances of suchphrases in various places in the specification are not necessarily allreferring to the same embodiment. Further, when a particular feature,structure, or characteristic is described in connection with anyembodiment, it is submitted that it is within the purview of one skilledin the art to effect such feature, structure, or characteristic inconnection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

INDUSTRIAL APPLICABILITY

According to the embodiments, in case the materiel such as thedielectric is not formed at the outer of the light emitting structure,stress caused by contacting of dielectric at the outer of the lightemitting structure can be reduced.

According to the embodiments, in case the dielectric is not formed atthe outer of the light emitting structure, fabricating process of thelight emitting device can be improved.

According to the embodiments, reliability of the light emitting devicecan be improved.

1. A semiconductor light emitting device comprising: a light emittingstructure comprising a first conductive type semiconductor layer, anactive layer under the first conductive type semiconductor layer, and asecond conductive type semiconductor layer under the active layer; areflective electrode layer under the light emitting structure; and anouter protection layer at an cuter circumference of the reflectiveelectrode layer.
 2. The semiconductor light emitting device according toclaim 1, wherein the cuter protection layer comprises the samesemiconductor material as the second conductive type semiconductorlayer.
 3. The semiconductor light emitting device according to claim 1,wherein the cuter protection layer is formed with a frame form betweenan cuter top of the reflective electrode layer and the second conductivetype semiconductor layer.
 4. The semiconductor light emitting deviceaccording to claim 1, wherein the cuter protection layer comprises atleast one of GaN, InN, AN, InGaN, AlGaN, InAlGaN, and AlInN, and isdoped with n-type dopants or p-type dopants.
 5. The semiconductor lightemitting device according to claim 1, wherein the cuter protection layercomprises an undoped GaN layer.
 6. The semiconductor light emittingdevice according to claim 1, wherein the light emitting structurecomprises an outer groove at an cuter circumference of the secondconductive type semiconductor layer from the first conductorsemiconductor layer.
 7. The semiconductor light emitting deviceaccording to claim 6, wherein the cuter groove is formed with a depthfrom the first conductive type semiconductor layer to the depth exposinga part of the second conductive type semiconductor layer or the outerprotection layer.
 8. The semiconductor light emitting device accordingto claim 1, wherein the first conductive type semiconductor layercomprises an n-type semiconductor layer, and the second conductive typesemiconductor layer comprises a p-type semiconductor layer.
 9. Thesemiconductor light emitting device according to claim 1, comprising aconductive support substrate under the reflective electrode layer; andat least one of a first electrode and a transparent electrode on thefirst conductive type semiconductor layer.
 10. A semiconductor lightemitting device comprising: a light emitting structure comprising afirst conductive type semiconductor layer, an active layer under thefirst conductive type semiconductor layer, a second conductive typesemiconductor layer under the active layer, and an cuter groove at ancuter circumference of each of the layers; and a reflective electrodelayer under the light emitting structure.
 11. The semiconductor lightemitting device according to claim 10, wherein an cuter bottom of thesecond conductive type semiconductor layer is formed with a frame format the cuter circumference of the reflective electrode layer.
 12. Thesemiconductor light emitting device according to claim 10, comprising ancuter protection layer with a frame form at the outer circumference ofthe reflective electrode layer.
 13. The semiconductor light emittingdevice according to claim 12, wherein a width of the outer groove withthe frame form is less than a width of the outer protection layer. 14.The semiconductor light emitting device according to claim 10, wherein acenter area and an cuter circumference area of the second conductivetype semiconductor layer have respectively different thicknesses. 15.The semiconductor light emitting device according to claim 12, wherein awidth of the outer protection layer ranges from 20 μm to 600 μm, and athickness of the cuter protection layer ranges from 5000 Å to 500 μm.16. The semiconductor light emitting device according to claim 10,wherein a width of the outer groove ranges from 10 μm to 500 μm.
 17. Thesemiconductor light emitting device according to claim 10, comprising ann-type semiconductor layer or a p-type semiconductor layer under thesecond conductive type semiconductor layer.
 18. A method of fabricatinga semiconductor light emitting device, the method comprising: forming alight emitting structure on a wafer substrate, the light emittingstructure comprising at least a sequentially-stacked first conductivetype semiconductor layer, active layer, and second conductive typesemiconductor layer; forming an cuter protection layer at an outercircumference on the second conductive type semiconductor layer; andforming a reflective electrode layer on the second conductive typesemiconductor layer and the outer protection layer.
 19. The methodaccording to claim 18, comprising: removing the wafer substrate; formingan outer groove by etching an outer circumference of the light emittingstructure after positioning the reflective electrode layer on a base;and forming a first electrode on the first conductive type semiconductorlayer.
 20. The method according to claim 18, wherein the forming theouter protection layer comprises: forming an oxide layer pattern on thecenter area of the second conductive type semiconductor; and removingthe oxide layer pattern after forming the outer protection layer at theouter circumference of the oxide layer pattern, forming a conductivesupport substrate on the reflective electrode layer.